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| QS5U27 Transistor Small switching (-20V, -1.5A) QS5U27 !Features 1) The QS5U27 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch Treueh MOSFET have a low on-state resisternce with a fast switching. 3) Pch Treueh MOSFET is neucted a low voltage drive (2.5V). 4) The independently connected Schottky barrier diode have a low forward voltage. !Applications load switch, DC/DC conversion !Structure *Silicon P-channel MOS FET *Schottky Barrier DIODE !Equivalent circuit (5) (4) !External dimensions (Units : mm) 2.8 TSMT5 0.4 (1) 1.6 0~0.1 (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (3) (4) 0.95 0.95 1.9 2.9 (2) (5) 0.3~0.6 Each lead has same dimensions Abbreviated symbol : U27 2 !Packaging specifications Package Type QS5U27 Code Basic ordering unit (pieces) Taping TR 3000 (1) 1 ESD protection diode 2 Body diode 1 (2) (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain A protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. !Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP Tch Symbol VRM VR IF IFSM Tj Symbol PD Tstg Limits -20 12 1.5 6.0 -0.75 -3.0 150 Limits 25 20 1.0 3.0 125 Limits 1.0 -40~+125 Unit V V A A 1 A A 1 C Unit V V A A 2 C Unit W / TOTAL 3 C Channel temperature Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Parameter Total power dispation Range of strage temperature 1 Pw10s, Duty cycle1% 2 60Hz * 1cyc. 3 Mounted on a ceramic board. 1.0MAX 0.16 0.85 0.7 1/3 QS5U27 Transistor !Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate-source leakage IGSS - Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current IDSS - Gate threshold voltage VGS (th) -0.7 - Static drain-source on-starte - RDS (on) resistance - Forward transfer admittance 1.0 Yfs Input capacitance Ciss - Output capacitance Coss - Reverse transfer capacitance - Crss Tum-on delay time td (on) - Rise time tr - Tum-off delay time - td (off) Fall time tf - Total gate charge Qg - Gate-source charge Qgs - Gate-drain charge Qgd - Pulsed Typ. - - - - 160 180 260 - 325 60 40 10 10 35 10 4.2 1.0 1.1 Max. 10 - -1 -2.0 200 240 340 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V, VDS=0V ID=-1mA, VGS=0V VDS=-20V, VGS=0V VDS=-10V, ID=-1mA ID=-1.5A, VGS=-4.5V ID=-1.5A, VGS=-4V ID=-0.75A, VGS=-2.5V VDS=-10V, ID=-0.75A VDS=-10V VGS=0V f=1MHz ID=-0.75A VDD -15V VGS=-4.5V RL=20 RGS=10 VDD -15V VGS=-4.5V ID=-1.5A !Body diode (Source-drain) Parameter Forward voltage Symbol VSD Symbol VF IR Min. - Min. - - Typ. - Typ. - - Max. -1.2 Max. 0.45 200 Unit V Unit V A IF=1.0A VR=20V Conditions IS=-0.75A, VGS=0V Conditions Parameter Forward voltage Reverse leakage !Electrical characteristic curves 10 1 0.1 Ta=125C Ta=75C Ta=25C Ta=-25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) VDS=-10V Pulsed 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) VGS=-4.5V Pulsed 1000 VGS=-4V Pulsed DRAIN CURRENT : -ID (A) 100 Ta=125C Ta=75C Ta=25C Ta=-25C 100 Ta=125C Ta=75C Ta=25C Ta=-25C 0.01 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 10 0.1 1 10 10 0.1 1 10 GATE-SOURCE VOLTAGE : -VGS (V) DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) Fig.1 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current () ID=-0.75A ID=-1.5A Fig.3 Static Drain-Source On-State Resistance vs. Drain Current () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 Ta=25C Pulsed VGS=-2.5V Pulsed 400 350 300 250 200 150 100 50 0 0 2 4 6 8 Ta=25C Pulsed 100 Ta=125C Ta=75C Ta=25C Ta=-25C 100 VGS=-2.5V VGS=-4.0V VGS=-4.5V 10 0.1 1 10 10 12 10 0.1 1 10 DRAIN CURRENT : -ID (A) GATE-SOURCE VOLTAGE : -VGS (V) DRAIN CURRENT : -ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current () Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) 2/3 QS5U27 Transistor REVERCE DRAIN CURRENT : -IDR (A) 10 VGS=0V Pulsed 10000 Ta=25C f=1MHZ VGS=0V 1000 1 Ta=125C Ta=75C Ta=25C Ta=-25C 1000 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ta=25C VDD=-15V VGS=-4.5V RG=10 Pulsed 100 td(off) tf Ciss 0.1 100 Coss Crss 10 td(on) tr 0.01 0 0.5 1 1.5 2 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 SOURCE-DRAIN VOLTAGE : -VSD (V) DRAIN-SOURCE VOLTAGE : -VDS (V) DRAIN CURRENT : -ID (A) Fig.7 Reverse Drain Current vs. Source-Drain Current Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Switching Characteristics 8 GATE-SOURCE VOLTAGE : VGS (V) 7 6 5 4 3 2 1 0 0 1 2 3 4 Ta=25C VDD=-15V ID=-1.5A RG=10 Pulsed 5 6 TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics !Measurement circuits Pulse Width VGS ID RL D.U.T. RG VDD VDS td(on) ton 90% tr td(off) toff 90% tr 10% VDS VGS 10% 50% 90% 50% 10% Fig.11 Switching Time Measurement Circuit Fig.12 Switching Waveforms VG VGS ID RL IG(Const) D.U.T. RG VDD VDS VGS Qgs Qgd Qg Charge Fig.13 Gate Charge Measurement Circuit Fig.14 Gate Charge Waveforms 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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